AS4C4M32S-7BCN
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 128MBIT PARALLEL 90TFBGA
$5.38
Available to order
Reference Price (USD)
1+
$4.16000
10+
$3.77400
25+
$3.69160
50+
$3.67120
190+
$3.29237
380+
$3.28011
570+
$3.15930
1,140+
$3.00368
Exquisite packaging
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Alliance Memory, Inc. AS4C4M32S-7BCN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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AS4C4M32S-7BCN
$5.38
Product details
The AS4C4M32S-7BCN by Alliance Memory, Inc. represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The AS4C4M32S-7BCN demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The AS4C4M32S-7BCN also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Alliance Memory, Inc. memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the AS4C4M32S-7BCN memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 143 MHz
- Write Cycle Time - Word, Page: 2ns
- Access Time: 5.4 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-TFBGA (8x13)
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