AS4C64M4SA-6TINTR
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 256MBIT PAR 54TSOP II
$3.97
Available to order
Reference Price (USD)
1,000+
$3.23474
2,000+
$3.20166
3,000+
$3.07598
Exquisite packaging
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| EMS | 3-7 days |
Alliance Memory, Inc. AS4C64M4SA-6TINTR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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AS4C64M4SA-6TINTR
$3.97
Product details
Introducing the AS4C64M4SA-6TINTR from Alliance Memory, Inc., a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The AS4C64M4SA-6TINTR incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The AS4C64M4SA-6TINTR also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this Alliance Memory, Inc. memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the AS4C64M4SA-6TINTR to ensure successful implementation in your design.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 256Mb (64M x 4)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 5 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 54-TSOP II
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