AS4C8M16D1-5BINTR
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 128MBIT PARALLEL 60TFBGA
$3.19
Available to order
Reference Price (USD)
2,500+
$2.28690
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Alliance Memory, Inc. AS4C8M16D1-5BINTR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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AS4C8M16D1-5BINTR
$3.19
Product details
The AS4C8M16D1-5BINTR memory IC from Alliance Memory, Inc. provides a robust storage solution for mission-critical data applications. This high-reliability product offers excellent performance characteristics, designed to meet the evolving needs of advanced electronic systems. Its architecture supports both high-density storage and rapid data access requirements.
Key attributes include error detection and correction functionality, extended lifecycle endurance, and wide operating voltage range. The AS4C8M16D1-5BINTR incorporates advanced security features to protect sensitive information while maintaining high-speed operation. Its design ensures compatibility with various host interfaces for flexible system integration.
Primary application sectors include defense systems, nuclear power plant controls, and emergency communication networks. The memory IC also excels in railway signaling systems, oil and gas monitoring equipment, and marine navigation devices. Its reliability makes it suitable for seismic monitoring stations and critical infrastructure protection systems.
For complete technical details and purchasing information about this Alliance Memory, Inc. memory solution, please submit your inquiry online. Our specialists will provide expert guidance on implementing the AS4C8M16D1-5BINTR in your specific application, along with competitive pricing options.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 700 ps
- Voltage - Supply: 2.3V ~ 2.7V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TFBGA (8x13)
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