B11G1822N60DYZ
Ampleon USA Inc.
Ampleon USA Inc.
B11G1822N60DYZ/PQFN-12X7/REELDP
$49.96
Available to order
Reference Price (USD)
1+
$49.96000
500+
$49.4604
1000+
$48.9608
1500+
$48.4612
2000+
$47.9616
2500+
$47.462
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B11G1822N60DYZ
$49.96
Product details
The B11G1822N60DYZ from Ampleon USA Inc. is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The B11G1822N60DYZ excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the B11G1822N60DYZ perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The B11G1822N60DYZ provides reliable and accurate signal processing in all scenarios. Ampleon USA Inc. has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the B11G1822N60DYZ is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the B11G1822N60DYZ from Ampleon USA Inc. for exceptional RF performance.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8GHz ~ 2.2GHz
- Gain: 32dB
- Voltage - Test: -
- Current Rating (Amps): 1.4µA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 65 V
- Package / Case: 36-QFN Exposed Pad
- Supplier Device Package: 36-PQFN (12x7)
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