BLP05H6110XRY
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 135V 27DB SOT1223-2
$34.17
Available to order
Reference Price (USD)
100+
$40.42240
Exquisite packaging
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BLP05H6110XRY
$34.17
Product details
Optimize your RF applications with the BLP05H6110XRY RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLP05H6110XRY handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The BLP05H6110XRY is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The BLP05H6110XRY ensures consistent operation across various frequencies. Ampleon USA Inc. has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the BLP05H6110XRY is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the BLP05H6110XRY from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 108MHz
- Gain: 27dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 20 mA
- Power - Output: 110W
- Voltage - Rated: 135 V
- Package / Case: SOT-1223-2
- Supplier Device Package: 4-HSOPF
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