BLP27M810Z
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 17DB 16VDFN
$20.98
Available to order
Reference Price (USD)
500+
$15.20978
Exquisite packaging
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BLP27M810Z
$20.98
Product details
The BLP27M810Z by Ampleon USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The BLP27M810Z excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the BLP27M810Z perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The BLP27M810Z delivers precise and stable signal processing across all applications. Ampleon USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the BLP27M810Z is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the BLP27M810Z from Ampleon USA Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.14GHz
- Gain: 17dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 110 mA
- Power - Output: 2W
- Voltage - Rated: 65 V
- Package / Case: 16-VDFN Exposed Pad
- Supplier Device Package: 16-HVSON (6x4)
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