BLS7G2730L-200PU
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 12DB SOT539A
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Reference Price (USD)
20+
$497.33200
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BLS7G2730L-200PU
$0.00
Product details
The BLS7G2730L-200PU from Ampleon USA Inc. is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The BLS7G2730L-200PU excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the BLS7G2730L-200PU perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The BLS7G2730L-200PU offers reliable and accurate signal processing in all applications. Ampleon USA Inc. has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the BLS7G2730L-200PU is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the BLS7G2730L-200PU from Ampleon USA Inc. for exceptional RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.7GHz ~ 3GHz
- Gain: 12dB
- Voltage - Test: 32 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 200W
- Voltage - Rated: 65 V
- Package / Case: SOT-539A
- Supplier Device Package: SOT539A
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