BLS7G3135LS-350P,1
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 10DB SOT539B
$825.00
Available to order
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$834.37000
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BLS7G3135LS-350P,1
$825.00
Product details
Enhance your RF circuitry with the BLS7G3135LS-350P,1 RF MOSFET transistor from Ampleon USA Inc., a standout in the discrete semiconductor products market. This transistor is specifically designed for high-frequency applications, offering unmatched performance and reliability. The BLS7G3135LS-350P,1 features advanced FET technology that ensures low noise and high gain, critical for sensitive RF systems. Its efficient power handling capabilities make it suitable for both transmitting and receiving applications. The transistor's robust design guarantees long-term stability and durability. With excellent thermal characteristics, the BLS7G3135LS-350P,1 maintains performance even under continuous operation. Its compact form factor allows for seamless integration into space-constrained designs. The BLS7G3135LS-350P,1 is perfect for applications requiring precise signal amplification and control. Key benefits include superior switching speed, minimal signal loss, and high impedance matching. These features make it ideal for use in telecommunications infrastructure, satellite communication systems, and military-grade electronics. Additionally, it is well-suited for IoT devices, test and measurement equipment, and aerospace applications. The BLS7G3135LS-350P,1 delivers consistent results across diverse operating environments. Engineers can rely on its precision and efficiency for critical RF tasks. Ampleon USA Inc. has engineered this MOSFET to meet the highest industry standards. For projects demanding top-tier RF performance, the BLS7G3135LS-350P,1 is an excellent choice. Don't miss the opportunity to incorporate this high-quality transistor into your designs. Visit our website to request a quote or submit an inquiry today. Experience the difference with the BLS7G3135LS-350P,1 from Ampleon USA Inc..
General specs
- Product Status: Not For New Designs
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 3.5GHz
- Gain: 10dB
- Voltage - Test: 32 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 320W
- Voltage - Rated: 65 V
- Package / Case: SOT-539B
- Supplier Device Package: SOT539B
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