ATF-511P8-TR2
Broadcom Limited
         
                
                                Broadcom Limited                            
                        
                                FET RF 7V 2GHZ 8-LPCC                            
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Broadcom Limited ATF-511P8-TR2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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                            Product details
Upgrade your RF systems with the ATF-511P8-TR2 RF MOSFET transistor from Broadcom Limited, a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The ATF-511P8-TR2 offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the ATF-511P8-TR2 ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The ATF-511P8-TR2 ensures accurate and stable signal processing in all scenarios. Broadcom Limited has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the ATF-511P8-TR2 is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the ATF-511P8-TR2 from Broadcom Limited for superior RF performance.
                General specs
- Product Status: Obsolete
- Transistor Type: E-pHEMT
- Frequency: 2GHz
- Gain: 14.8dB
- Voltage - Test: 4.5 V
- Current Rating (Amps): 1A
- Noise Figure: 1.4dB
- Current - Test: 200 mA
- Power - Output: 30dBm
- Voltage - Rated: 7 V
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-LPCC (2x2)

 
                         
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    