NE25139-T1
CEL
CEL
FET RF 13V 900MHZ SOT-143
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NE25139-T1
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Product details
The NE25139-T1 by CEL is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The NE25139-T1 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the NE25139-T1 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The NE25139-T1 delivers precise and stable signal processing across all applications. CEL has produced this MOSFET to meet the highest standards. For reliable RF performance, the NE25139-T1 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the NE25139-T1 from CEL for unmatched RF quality.
General specs
- Product Status: Obsolete
- Transistor Type: MESFET Dual Gate
- Frequency: 900MHz
- Gain: 20dB
- Voltage - Test: 5 V
- Current Rating (Amps): 40mA
- Noise Figure: 1.1dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 13 V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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