2N6792TX
Harris Corporation
Harris Corporation
2A, 400V, 1.8OHM, N-CHANNEL
$7.82
Available to order
Reference Price (USD)
1+
$7.82000
500+
$7.7418
1000+
$7.6636
1500+
$7.5854
2000+
$7.5072
2500+
$7.429
Exquisite packaging
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2N6792TX
$7.82
Product details
Discover the exceptional capabilities of Harris Corporation's 2N6792TX, a premium single MOSFET transistor in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the rigorous demands of modern power electronics, offering superior performance in switching and amplification applications. The 2N6792TX boasts impressive technical features including optimized gate control, low leakage current, and excellent thermal management properties. Its robust design ensures reliable operation in various environmental conditions, from industrial settings to outdoor installations. The MOSFET's versatile nature makes it ideal for use in electric powertrains, industrial automation controllers, and high-frequency power converters. For consumer applications, it's perfect for high-performance computing, advanced gaming systems, and next-generation home appliances. The component also finds significant utility in green energy applications such as photovoltaic systems and energy storage solutions. With its balanced combination of power handling and efficiency, the 2N6792TX provides an optimal solution for your most challenging design requirements. Interested in learning more about how this MOSFET can enhance your projects? Our team is ready to assist simply submit your inquiry through our online portal for personalized support and competitive pricing options.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
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