5962-8777801YA
National Semiconductor
National Semiconductor
POWER BIPOLAR TRANSISTOR, PNP
$20.54
Available to order
Reference Price (USD)
1+
$20.54000
500+
$20.3346
1000+
$20.1292
1500+
$19.9238
2000+
$19.7184
2500+
$19.513
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5962-8777801YA
$20.54
Product details
Optimize your circuit performance with the 5962-8777801YA, a precision Bipolar Junction Transistor from National Semiconductor. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The 5962-8777801YA exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. National Semiconductor employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The 5962-8777801YA combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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