Shopping cart

Subtotal: $0.00

FDD8586

Fairchild Semiconductor
FDD8586 Preview
Fairchild Semiconductor
MOSFET N-CH 20V 35A TO252AA
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Fairchild Semiconductor FDD8586 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FDD8586

FDD8586

$0.33

Product details

Enhance your electronic designs with the FDD8586 single MOSFET transistor from Fairchild Semiconductor, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The FDD8586 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the FDD8586 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the FDD8586 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Infineon Technologies

IPS65R1K0CEAKMA1

$0.00 (not set)
Infineon Technologies

BTS247ZE3062AATMA2

$0.00 (not set)
onsemi

MGSF3455XT1

$0.00 (not set)
onsemi

NVMYS2D2N06CLTWG

$0.00 (not set)
onsemi

FQP20N06L

$0.00 (not set)
Infineon Technologies

IPB014N06NATMA1

$0.00 (not set)
Panjit International Inc.

PJC7439_R1_00001

$0.00 (not set)
STMicroelectronics

STFW38N65M5

$0.00 (not set)
STMicroelectronics

STL105N4LF7AG

$0.00 (not set)
Toshiba Semiconductor and Storage

TK5A55D(STA4,Q,M)

$0.00 (not set)
Top