Shopping cart

Subtotal: $0.00

FDMD8900

Fairchild Semiconductor
FDMD8900 Preview
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, N
$0.91
Available to order
Reference Price (USD)
3,000+
$0.96852
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Fairchild Semiconductor FDMD8900 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FDMD8900

FDMD8900

$0.91

Product details

The FDMD8900 from Fairchild Semiconductor is a high-efficiency MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. This product is designed for applications requiring high power density and reliable performance.\n\nKey features of the FDMD8900 include low on-resistance, fast switching, and superior thermal characteristics. The array format integrates multiple transistors, simplifying design and saving board space. Its robust construction ensures durability in challenging environments.\n\nIdeal uses include electric vehicle power systems, industrial controls, and consumer electronics. Electric vehicle power systems benefit from its high current handling and efficiency. Industrial controls utilize its reliability for precise operation. Consumer electronics rely on its compact design and performance.\n\nEnhance your designs with the FDMD8900. Request a quote today to explore how this MOSFET array can meet your requirements. Our team is here to provide the support you need.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 17A
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5

Viewed products

onsemi

VEC2415-TL-W-Z

$0.00 (not set)
Harris Corporation

RF1S630

$0.00 (not set)
Goford Semiconductor

G33N03D3

$0.00 (not set)
Sanyo

FSS275-TL-E-SA

$0.00 (not set)
onsemi

2SJ634-E

$0.00 (not set)
Diodes Incorporated

DMC2990UDJQ-7

$0.00 (not set)
Microchip Technology

MSCSM120AM31CTBL1NG

$0.00 (not set)
IXYS

IXTL2X180N10T

$0.00 (not set)
Diodes Incorporated

DMN3032LFDBWQ-7

$0.00 (not set)
Microchip Technology

MSCSM170TAM15CTPAG

$0.00 (not set)
Top