HGT4E30N60B3S
Harris Corporation
Harris Corporation
IGBT 60A, 600V, N CHANNEL, TO 26
$4.43
Available to order
Reference Price (USD)
1+
$4.43000
500+
$4.3857
1000+
$4.3414
1500+
$4.2971
2000+
$4.2528
2500+
$4.2085
Exquisite packaging
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HGT4E30N60B3S
$4.43
Product details
Enhance your electronic designs with the HGT4E30N60B3S, a premium Bipolar Junction Transistor (BJT) from Harris Corporation. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The HGT4E30N60B3S features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The HGT4E30N60B3S is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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