KSB1116AGBU
Fairchild Semiconductor
Fairchild Semiconductor
TRANS PNP 60V 1A TO92-3
$0.04
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KSB1116AGBU
$0.04
Product details
Experience superior semiconductor performance with the KSB1116AGBU, a high-efficiency Bipolar Junction Transistor from Fairchild Semiconductor. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The KSB1116AGBU demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Fairchild Semiconductor produces the KSB1116AGBU using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the KSB1116AGBU stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.
General specs
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 750 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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