MMBFJ310
Fairchild Semiconductor
Fairchild Semiconductor
RF ULTRA HIGH FREQUENCY BAND, N-
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MMBFJ310
$0.00
Product details
Maximize your RF capabilities with the MMBFJ310 RF MOSFET transistor from Fairchild Semiconductor, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The MMBFJ310 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The MMBFJ310 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The MMBFJ310 ensures consistent operation across a wide frequency range. Fairchild Semiconductor has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the MMBFJ310 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the MMBFJ310 from Fairchild Semiconductor for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: N-Channel JFET
- Frequency: 450MHz
- Gain: 12dB
- Voltage - Test: 10 V
- Current Rating (Amps): 60mA
- Noise Figure: 3dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 25 V
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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