MRF6S19100NBR1
Freescale Semiconductor
Freescale Semiconductor
RF POWER N-CHANNEL, MOSFET
$52.49
Available to order
Reference Price (USD)
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$52.49000
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$51.9651
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$51.4402
1500+
$50.9153
2000+
$50.3904
2500+
$49.8655
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MRF6S19100NBR1
$52.49
Product details
The MRF6S19100NBR1 from Freescale Semiconductor is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The MRF6S19100NBR1 excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the MRF6S19100NBR1 perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The MRF6S19100NBR1 provides reliable and accurate signal processing in all scenarios. Freescale Semiconductor has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the MRF6S19100NBR1 is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the MRF6S19100NBR1 from Freescale Semiconductor for exceptional RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 14.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 22W
- Voltage - Rated: 68 V
- Package / Case: TO-272BB
- Supplier Device Package: TO-272 WB-4
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