MRF6VP2600HR5-FR
Freescale Semiconductor
Freescale Semiconductor
RF POWER FIELD-EFFECT TRANSISTOR
$318.45
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MRF6VP2600HR5-FR
$318.45
Product details
The MRF6VP2600HR5-FR from Freescale Semiconductor is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The MRF6VP2600HR5-FR excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the MRF6VP2600HR5-FR perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The MRF6VP2600HR5-FR offers reliable and accurate signal processing in all applications. Freescale Semiconductor has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the MRF6VP2600HR5-FR is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the MRF6VP2600HR5-FR from Freescale Semiconductor for exceptional RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 500MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): 50µA
- Noise Figure: -
- Current - Test: 2.6 A
- Power - Output: 600W
- Voltage - Rated: 110 V
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
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