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RFD20N03SM

Harris Corporation
RFD20N03SM Preview
Harris Corporation
N-CHANNEL POWER MOSFET
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
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RFD20N03SM

RFD20N03SM

$0.40

Product details

The RFD20N03SM single MOSFET from Harris Corporation represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The RFD20N03SM features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the RFD20N03SM delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3 (DPAK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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