SGW5N60RUFDTM
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
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SGW5N60RUFDTM
$0.00
Product details
Experience unparalleled power control with the SGW5N60RUFDTM single IGBT transistor by Fairchild Semiconductor. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The SGW5N60RUFDTM boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the SGW5N60RUFDTM offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 15 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
- Power - Max: 60 W
- Switching Energy: 88µJ (on), 107µJ (off)
- Input Type: Standard
- Gate Charge: 16 nC
- Td (on/off) @ 25°C: 13ns/34ns
- Test Condition: 300V, 5A, 40Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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