Shopping cart

Subtotal: $0.00

SI3442DV

Fairchild Semiconductor
SI3442DV Preview
Fairchild Semiconductor
MOSFET N-CH 20V 4.1A SUPERSOT6
$0.14
Available to order
Reference Price (USD)
3,000+
$0.16383
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Fairchild Semiconductor SI3442DV is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SI3442DV

SI3442DV

$0.14

Product details

Enhance your electronic designs with the SI3442DV single MOSFET transistor from Fairchild Semiconductor, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SI3442DV features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SI3442DV particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SI3442DV represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
  • Vgs (Max): 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT™-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

Viewed products

Microchip Technology

DN2450K4-G

$0.00 (not set)
Vishay Siliconix

IRFD9014PBF

$0.00 (not set)
onsemi

MTD3055VL

$0.00 (not set)
STMicroelectronics

STB150N3LH6

$0.00 (not set)
NXP USA Inc.

BUK9E6R1-100E,127

$0.00 (not set)
Toshiba Semiconductor and Storage

TK160F10N1L,LXGQ

$0.00 (not set)
Infineon Technologies

BSS87H6327XTSA1

$0.00 (not set)
STMicroelectronics

STE145N65M5

$0.00 (not set)
Panjit International Inc.

PJD4NA60_R2_00001

$0.00 (not set)
NXP USA Inc.

BUK7908-40AIE127

$0.00 (not set)
Top