2DB1188P-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 32V 2A SOT89-3
$0.39
Available to order
Reference Price (USD)
2,500+
$0.14648
Exquisite packaging
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2DB1188P-13
$0.39
Product details
Optimize your circuit performance with the 2DB1188P-13, a precision Bipolar Junction Transistor from Diodes Incorporated. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The 2DB1188P-13 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Diodes Incorporated employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The 2DB1188P-13 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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