APT27ZTR-G1
Diodes Incorporated
Diodes Incorporated
TRANS NPN 450V 0.8A TO92
$0.37
Available to order
Reference Price (USD)
2,000+
$0.07590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated APT27ZTR-G1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
APT27ZTR-G1
$0.37
Product details
The APT27ZTR-G1 by Diodes Incorporated is a top-tier Bipolar Junction Transistor (BJT) in the Transistors - Bipolar (BJT) - Single subcategory. This discrete semiconductor product excels in amplification and switching roles across various electronic circuits. With its superior current handling capacity and fast response times, the APT27ZTR-G1 ensures smooth operation in demanding environments. The transistor's low leakage current and high breakdown voltage contribute to its exceptional performance. Engineers appreciate its consistent characteristics batch after batch, enabling predictable circuit behavior. Typical applications include motor control systems, LED drivers, and RF modules. Medical devices, telecommunications equipment, and renewable energy systems also leverage this BJT's capabilities. The APT27ZTR-G1 is RoHS compliant and manufactured using advanced quality control processes. Its lead-free construction aligns with modern environmental standards. For professionals seeking reliable single BJT transistors, the APT27ZTR-G1 delivers outstanding value. Visit our website or submit an inquiry to learn more about purchasing options and volume discounts.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 200mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
Viewed products
