DXTN5860DFDB-7
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR U-DFN2020-
$0.20
Available to order
Reference Price (USD)
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$0.19519
500+
$0.1932381
1000+
$0.1912862
1500+
$0.1893343
2000+
$0.1873824
2500+
$0.1854305
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Diodes Incorporated DXTN5860DFDB-7 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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DXTN5860DFDB-7
$0.20
Product details
Optimize your circuit performance with the DXTN5860DFDB-7, a precision Bipolar Junction Transistor from Diodes Incorporated. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The DXTN5860DFDB-7 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Diodes Incorporated employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The DXTN5860DFDB-7 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 315mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
- Power - Max: 690 mW
- Frequency - Transition: 115MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-3 (Type B)
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