Shopping cart

Subtotal: $0.00

FZT655TA

Diodes Incorporated
FZT655TA Preview
Diodes Incorporated
TRANS NPN 150V 1A SOT223-3
$0.72
Available to order
Reference Price (USD)
1+
$0.72000
500+
$0.7128
1000+
$0.7056
1500+
$0.6984
2000+
$0.6912
2500+
$0.684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Diodes Incorporated FZT655TA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FZT655TA

FZT655TA

$0.72

Product details

Optimize your circuit performance with the FZT655TA, a precision Bipolar Junction Transistor from Diodes Incorporated. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The FZT655TA exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Diodes Incorporated employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The FZT655TA combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
  • Power - Max: 2 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-3

Viewed products

Infineon Technologies

IPP80CN10NGXKSA1

$0.00 (not set)
Rohm Semiconductor

BSS4130AHZGT116

$0.00 (not set)
onsemi

BC847AMTF

$0.00 (not set)
Sanken

2SC4153

$0.00 (not set)
Diodes Incorporated

DSS2515M-7B

$0.00 (not set)
Rohm Semiconductor

2SC4081UBTLR

$0.00 (not set)
Nexperia USA Inc.

PMST2222A,115

$0.00 (not set)
Central Semiconductor Corp

CXTA14 TR PBFREE

$0.00 (not set)
NTE Electronics, Inc

TIP35A

$0.00 (not set)
Fairchild Semiconductor

SS9011HBU

$0.00 (not set)
Top