MMBT2222AQ-7-F
Diodes Incorporated
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
$0.03
Available to order
Reference Price (USD)
1+
$0.03244
500+
$0.0321156
1000+
$0.0317912
1500+
$0.0314668
2000+
$0.0311424
2500+
$0.030818
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MMBT2222AQ-7-F
$0.03
Product details
Enhance your electronic designs with the MMBT2222AQ-7-F, a premium Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The MMBT2222AQ-7-F features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The MMBT2222AQ-7-F is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 310 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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