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MMST3904-7-F

Diodes Incorporated
MMST3904-7-F Preview
Diodes Incorporated
TRANS NPN 40V 0.2A SOT323
$0.29
Available to order
Reference Price (USD)
3,000+
$0.04830
6,000+
$0.04200
15,000+
$0.03570
30,000+
$0.03360
75,000+
$0.03150
150,000+
$0.02800
Exquisite packaging
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Diodes Incorporated MMST3904-7-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MMST3904-7-F

MMST3904-7-F

$0.29

Product details

Experience superior semiconductor performance with the MMST3904-7-F, a high-efficiency Bipolar Junction Transistor from Diodes Incorporated. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The MMST3904-7-F demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Diodes Incorporated produces the MMST3904-7-F using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the MMST3904-7-F stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323

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