ZXTP2006E6TA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 20V 3.5A SOT23-6
$0.26
Available to order
Reference Price (USD)
3,000+
$0.29283
Exquisite packaging
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ZXTP2006E6TA
$0.26
Product details
The ZXTP2006E6TA by Diodes Incorporated sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The ZXTP2006E6TA commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Diodes Incorporated's commitment to innovation is evident in the ZXTP2006E6TA's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3.5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 130mV @ 350mA, 3.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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