ZXTP2008ZQTA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 30V 5.5A SOT89-3
$0.46
Available to order
Reference Price (USD)
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$0.45712
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$0.4525488
1000+
$0.4479776
1500+
$0.4434064
2000+
$0.4388352
2500+
$0.434264
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ZXTP2008ZQTA
$0.46
Product details
Optimize your circuit performance with the ZXTP2008ZQTA, a precision Bipolar Junction Transistor from Diodes Incorporated. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The ZXTP2008ZQTA exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Diodes Incorporated employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The ZXTP2008ZQTA combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5.5 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 175mV @ 500mA, 5.5A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 1.5 W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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