FBG10N05AC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 100V5A COTS 4FSMD-A
$313.40
Available to order
Reference Price (USD)
1+
$313.40000
500+
$310.266
1000+
$307.132
1500+
$303.998
2000+
$300.864
2500+
$297.73
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
EPC Space, LLC FBG10N05AC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FBG10N05AC
$313.40
Product details
Optimize your power management solutions with the FBG10N05AC single MOSFET transistor from EPC Space, LLC, a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The FBG10N05AC features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the FBG10N05AC provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
Viewed products
