Shopping cart

Subtotal: $0.00

GPIHV30DFN

GaNPower
GPIHV30DFN Preview
GaNPower
GANFET N-CH 1200V 30A DFN8X8
$22.00
Available to order
Reference Price (USD)
1+
$22.00000
500+
$21.78
1000+
$21.56
1500+
$21.34
2000+
$21.12
2500+
$20.9
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

GaNPower GPIHV30DFN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
GPIHV30DFN

GPIHV30DFN

$22.00

Product details

GaNPower presents the GPIHV30DFN, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The GPIHV30DFN offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The GPIHV30DFN also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
  • Vgs (Max): +7.5V, -12V
  • Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die

Viewed products

Vishay Siliconix

IRFBC40APBF-BE3

$0.00 (not set)
Nexperia USA Inc.

BSH103BKR

$0.00 (not set)
Infineon Technologies

IRLS3036TRLPBF

$0.00 (not set)
onsemi

FDB1D7N10CL7

$0.00 (not set)
Toshiba Semiconductor and Storage

SSM3K341TU,LF

$0.00 (not set)
Motorola

MTB4N40ET4

$0.00 (not set)
Infineon Technologies

BSO040N03MSGXUMA1

$0.00 (not set)
STMicroelectronics

STP18N60DM2

$0.00 (not set)
Infineon Technologies

IPP60R280CFD7XKSA1

$0.00 (not set)
STMicroelectronics

STW20NM60FD

$0.00 (not set)
Top