GPA025A120MN-ND
SemiQ
SemiQ
IGBT 1200V 50A 312W TO3PN
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Reference Price (USD)
2,500+
$1.72900
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GPA025A120MN-ND
$0.00
Product details
Enhance your power control systems with the GPA025A120MN-ND single IGBT transistor from SemiQ. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The GPA025A120MN-ND is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the GPA025A120MN-ND offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
- Power - Max: 312 W
- Switching Energy: 4.15mJ (on), 870µJ (off)
- Input Type: Standard
- Gate Charge: 350 nC
- Td (on/off) @ 25°C: 57ns/240ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 480 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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