GPA040A120MN-FD
SemiQ
SemiQ
IGBT 1200V 80A 480W TO3PN
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Reference Price (USD)
2,500+
$3.19200
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GPA040A120MN-FD
$0.00
Product details
The GPA040A120MN-FD from SemiQ is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the GPA040A120MN-FD ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the GPA040A120MN-FD for your next project request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
- Power - Max: 480 W
- Switching Energy: 5.3mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 480 nC
- Td (on/off) @ 25°C: 55ns/200ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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