2ED2109S06FXUMA1
Infineon Technologies
Infineon Technologies
IC HALF BRIDGE GATE DRIVER 650V
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies 2ED2109S06FXUMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2ED2109S06FXUMA1
$2.27
Product details
The 2ED2109S06FXUMA1 from Infineon Technologies is a premium PMIC - Gate Driver solution designed for high-efficiency power conversion systems. This advanced IC delivers precise control for power switches, enabling optimal performance in various applications. The 2ED2109S06FXUMA1 features a unique combination of high drive current capability and low power consumption, making it suitable for both high-power and energy-sensitive designs. Its intelligent thermal management system ensures reliable operation under varying load conditions. The gate driver's adaptive timing control minimizes switching losses while preventing cross-conduction. For electric vehicle powertrains, the 2ED2109S06FXUMA1 provides robust control for traction inverters and onboard chargers. It's equally effective in industrial UPS systems, where reliable power conversion is critical. The component also excels in high-power LED lighting drivers, enabling efficient dimming control. The 2ED2109S06FXUMA1 incorporates advanced diagnostic features that facilitate system monitoring and maintenance. Its configurable output stages accommodate different power device technologies and gate drive requirements. The gate driver's excellent noise immunity makes it suitable for operation in electrically noisy environments. These characteristics are particularly valuable for welding equipment and plasma cutting systems. The 2ED2109S06FXUMA1 also performs exceptionally in high-frequency resonant converters used in induction cooking applications. Its small form factor and high integration level simplify PCB layout while reducing overall system size. The device supports multiple control interfaces for flexible system integration. With its comprehensive protection features and reliable performance, the 2ED2109S06FXUMA1 is an excellent choice for demanding power electronics applications. Contact our sales team today to discuss your specific requirements and receive personalized product recommendations. Submit your inquiry through our website for prompt response and detailed technical information.
General specs
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 290mA, 700mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-53
Viewed products
