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BFP 720FESD E6327

Infineon Technologies
BFP 720FESD E6327 Preview
Infineon Technologies
RF TRANS NPN 4.7V 45GHZ 4TSFP
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Infineon Technologies BFP 720FESD E6327 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BFP 720FESD E6327

BFP 720FESD E6327

$0.00

Product details

Optimize your RF circuits with the BFP 720FESD E6327 BJT transistor from Infineon Technologies, a premium solution in the discrete semiconductor products market. This RF bipolar transistor delivers exceptional linearity and low intermodulation distortion, crucial for high-fidelity signal processing. Its advanced architecture ensures minimal phase noise, making it perfect for precision applications. The device features enhanced thermal management properties and electromagnetic shielding for reliable operation in harsh environments. With its compact form factor, the BFP 720FESD E6327 saves valuable board space without compromising performance. Typical implementations include cellular infrastructure equipment where consistent signal amplification is vital. Industrial automation systems benefit from its robustness in motor control and sensor interfaces. For military applications, it provides secure communication links in encrypted transmission systems. The transistor also excels in scientific instrumentation requiring accurate signal measurement. Engineers appreciate its design flexibility for both narrowband and broadband configurations. Infineon Technologies backs this product with rigorous quality testing and long-term reliability assurance. Whether you're upgrading existing equipment or developing next-gen RF solutions, the BFP 720FESD E6327 offers the performance edge you need. Visit our website to compare technical specifications or request a sample for evaluation. Let our experts guide you to the ideal transistor solution submit your project requirements now for a customized quotation.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
  • Gain: 10dB ~ 29dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP

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