Shopping cart

Subtotal: $0.00

BSC120N03MSGATMA1

Infineon Technologies
BSC120N03MSGATMA1 Preview
Infineon Technologies
MOSFET N-CH 30V 11A/39A TDSON
$0.75
Available to order
Reference Price (USD)
5,000+
$0.22557
10,000+
$0.21722
25,000+
$0.21266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies BSC120N03MSGATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BSC120N03MSGATMA1

BSC120N03MSGATMA1

$0.75

Product details

Enhance your electronic designs with the BSC120N03MSGATMA1 single MOSFET transistor from Infineon Technologies, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The BSC120N03MSGATMA1 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the BSC120N03MSGATMA1 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the BSC120N03MSGATMA1 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-5
  • Package / Case: 8-PowerTDFN

Viewed products

Infineon Technologies

IRF8302MTRPBF

$0.00 (not set)
onsemi

NTD6414ANT4G

$0.00 (not set)
Infineon Technologies

IPA65R280C6XKSA1

$0.00 (not set)
IXYS

IXTA90N055T2

$0.00 (not set)
STMicroelectronics

STD5NM60T4

$0.00 (not set)
Infineon Technologies

IRFS3806TRLPBF

$0.00 (not set)
Infineon Technologies

IRF5210STRRPBF

$0.00 (not set)
NXP USA Inc.

BUK652R3-40C,127

$0.00 (not set)
onsemi

FDPF5N50UT

$0.00 (not set)
Infineon Technologies

IRFP4227PBF

$0.00 (not set)
Top