CY7C1314BV18-250BZXC
Infineon Technologies
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
$32.27
Available to order
Reference Price (USD)
1+
$32.27000
500+
$31.9473
1000+
$31.6246
1500+
$31.3019
2000+
$30.9792
2500+
$30.6565
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies CY7C1314BV18-250BZXC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1314BV18-250BZXC
$32.27
Product details
Infineon Technologies's CY7C1314BV18-250BZXC represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability.
Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The CY7C1314BV18-250BZXC supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications.
The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The CY7C1314BV18-250BZXC serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions.
Explore the capabilities of this Infineon Technologies memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the CY7C1314BV18-250BZXC to support your project development cycle.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 250 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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