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CYD18S18V18-200BBAXI

Infineon Technologies
CYD18S18V18-200BBAXI Preview
Infineon Technologies
IC SRAM 18MBIT PARALLEL 256FBGA
$309.31
Available to order
Reference Price (USD)
1+
$309.31000
500+
$306.2169
1000+
$303.1238
1500+
$300.0307
2000+
$296.9376
2500+
$293.8445
Exquisite packaging
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Infineon Technologies CYD18S18V18-200BBAXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CYD18S18V18-200BBAXI

CYD18S18V18-200BBAXI

$309.31

Product details

The CYD18S18V18-200BBAXI from Infineon Technologies is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the CYD18S18V18-200BBAXI ensures efficient operation in both industrial and commercial environments. Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability. Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The CYD18S18V18-200BBAXI is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions. For pricing and availability of this Infineon Technologies memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.

General specs

  • Product Status: Obsolete
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.3 ns
  • Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-FBGA (17x17)

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