FS50R07N2E4_B11
Infineon Technologies

Infineon Technologies
IGBT MODULE
$49.97
Available to order
Reference Price (USD)
1+
$49.97000
500+
$49.4703
1000+
$48.9706
1500+
$48.4709
2000+
$47.9712
2500+
$47.4715
Exquisite packaging
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Infineon Technologies FS50R07N2E4_B11 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Experience superior performance with the FS50R07N2E4_B11 transistor module by Infineon Technologies. This discrete semiconductor product is designed for high-speed switching and energy efficiency, making it a versatile choice for various applications. Its robust construction ensures reliability in challenging conditions. The FS50R07N2E4_B11 is commonly used in power inverters, providing efficient energy conversion. It also excels in automotive ignition systems, enhancing engine performance. Additionally, this module is utilized in home appliances, improving energy savings and functionality. For designers and engineers seeking a high-quality transistor module, the FS50R07N2E4_B11 is a perfect fit. Contact us today to inquire about pricing and availability, and take your projects to the next level.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 190 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module