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IGC10T65QEX1SA1

Infineon Technologies
IGC10T65QEX1SA1 Preview
Infineon Technologies
IGBT CHIP
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IGC10T65QEX1SA1

IGC10T65QEX1SA1

$0.00

Product details

The IGC10T65QEX1SA1 from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the IGC10T65QEX1SA1 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the IGC10T65QEX1SA1 for your applications request a quote today.

General specs

  • Product Status: Obsolete
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.32V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die

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