IGW50N60T
Infineon Technologies
Infineon Technologies
IGW50N60 - DISCRETE IGBT WITHOUT
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IGW50N60T
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Product details
Maximize power efficiency with the IGW50N60T single IGBT transistor by Infineon Technologies. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The IGW50N60T features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the IGW50N60T delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333 W
- Switching Energy: 1.2mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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