IHW20N120R2
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A 330W TO247-3
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IHW20N120R2
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Product details
Experience unparalleled power control with the IHW20N120R2 single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IHW20N120R2 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IHW20N120R2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
- Power - Max: 330 W
- Switching Energy: 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 143 nC
- Td (on/off) @ 25°C: -/359ns
- Test Condition: 600V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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