IHY30N160R2XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1600V 30A 312W TO247HC-3
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IHY30N160R2XKSA1
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Product details
The IHY30N160R2XKSA1 by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IHY30N160R2XKSA1 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IHY30N160R2XKSA1 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 312 W
- Switching Energy: 2.53mJ
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: -/525ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
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