Shopping cart

Subtotal: $0.00

IMZ120R045M1XKSA1

Infineon Technologies
IMZ120R045M1XKSA1 Preview
Infineon Technologies
SICFET N-CH 1200V 52A TO247-4
$23.59
Available to order
Reference Price (USD)
1+
$23.59000
500+
$23.3541
1000+
$23.1182
1500+
$22.8823
2000+
$22.6464
2500+
$22.4105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IMZ120R045M1XKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IMZ120R045M1XKSA1

IMZ120R045M1XKSA1

$23.59

Product details

The IMZ120R045M1XKSA1 from Infineon Technologies is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the IMZ120R045M1XKSA1 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The IMZ120R045M1XKSA1 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the IMZ120R045M1XKSA1 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
  • Vgs(th) (Max) @ Id: 5.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
  • Vgs (Max): +20V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 228W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-1
  • Package / Case: TO-247-4

Viewed products

onsemi

FDH44N50

$0.00 (not set)
STMicroelectronics

STWA65N60DM6

$0.00 (not set)
Sanken

FKP202

$0.00 (not set)
Nexperia USA Inc.

PSMNR90-40SSHJ

$0.00 (not set)
Vishay Siliconix

IRF9520PBF-BE3

$0.00 (not set)
IXYS

IXFA60N25X3

$0.00 (not set)
Rectron USA

RM80N100T2

$0.00 (not set)
Fairchild Semiconductor

FDU6676AS

$0.00 (not set)
Toshiba Semiconductor and Storage

SSM3K324R,LF

$0.00 (not set)
Infineon Technologies

IRLML0030TRPBF

$0.00 (not set)
Top