Shopping cart

Subtotal: $0.00

IPD60R600P7SAUMA1

Infineon Technologies
IPD60R600P7SAUMA1 Preview
Infineon Technologies
MOSFET N-CH 600V 6A TO252-3
$1.01
Available to order
Reference Price (USD)
2,500+
$0.38217
5,000+
$0.35862
12,500+
$0.34684
25,000+
$0.34042
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPD60R600P7SAUMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPD60R600P7SAUMA1

IPD60R600P7SAUMA1

$1.01

Product details

Enhance your electronic designs with the IPD60R600P7SAUMA1 single MOSFET transistor from Infineon Technologies, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IPD60R600P7SAUMA1 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IPD60R600P7SAUMA1 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IPD60R600P7SAUMA1 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

onsemi

EMH1405-P-TL-H

$0.00 (not set)
Diodes Incorporated

DMP3130L-7

$0.00 (not set)
Toshiba Semiconductor and Storage

TPH2R003PL,LQ

$0.00 (not set)
Infineon Technologies

IPP80N06S2L05AKSA1

$0.00 (not set)
onsemi

NTMFS5C426NT3G

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOWF25S65

$0.00 (not set)
Diodes Incorporated

DMN63D8LW-13

$0.00 (not set)
onsemi

NVTFS015N04CTAG

$0.00 (not set)
Fairchild Semiconductor

SFS9Z14

$0.00 (not set)
Fairchild Semiconductor

FDD5N50TM

$0.00 (not set)
Top