Shopping cart

Subtotal: $0.00

IPD65R1K4C6ATMA1

Infineon Technologies
IPD65R1K4C6ATMA1 Preview
Infineon Technologies
MOSFET N-CH 650V 3.2A TO252-3
$0.71
Available to order
Reference Price (USD)
2,500+
$0.42319
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPD65R1K4C6ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPD65R1K4C6ATMA1

IPD65R1K4C6ATMA1

$0.71

Product details

Infineon Technologies presents the IPD65R1K4C6ATMA1, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The IPD65R1K4C6ATMA1 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The IPD65R1K4C6ATMA1 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

onsemi

FCH47N60NF

$0.00 (not set)
Nexperia USA Inc.

BUK7609-75A,118

$0.00 (not set)
Infineon Technologies

IRF7424TRPBF

$0.00 (not set)
Sanken

FKI07076

$0.00 (not set)
STMicroelectronics

STT6N3LLH6

$0.00 (not set)
Infineon Technologies

IRLR8259TRPBF

$0.00 (not set)
Infineon Technologies

IRFP4868PBF

$0.00 (not set)
Fairchild Semiconductor

FQPF30N06

$0.00 (not set)
Infineon Technologies

IRFR3410TRPBF

$0.00 (not set)
Goford Semiconductor

GT105N10T

$0.00 (not set)
Top