Shopping cart

Subtotal: $0.00

IPD80R4K5P7ATMA1

Infineon Technologies
IPD80R4K5P7ATMA1 Preview
Infineon Technologies
MOSFET N-CH 800V 1.5A TO252
$1.08
Available to order
Reference Price (USD)
2,500+
$0.33665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPD80R4K5P7ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPD80R4K5P7ATMA1

IPD80R4K5P7ATMA1

$1.08

Product details

Enhance your electronic designs with the IPD80R4K5P7ATMA1 single MOSFET transistor from Infineon Technologies, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IPD80R4K5P7ATMA1 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IPD80R4K5P7ATMA1 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IPD80R4K5P7ATMA1 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 13W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Infineon Technologies

IRFH5302TRPBF

$0.00 (not set)
onsemi

FDFMA2P029Z-F106

$0.00 (not set)
Microchip Technology

APT20M22JVR

$0.00 (not set)
Nexperia USA Inc.

BSS138PW,115

$0.00 (not set)
Fairchild Semiconductor

FQPF4N60

$0.00 (not set)
Panjit International Inc.

PJQ2422_R1_00001

$0.00 (not set)
onsemi

NTMS4935NR2G

$0.00 (not set)
Diodes Incorporated

ZXMP10A17GQTA

$0.00 (not set)
onsemi

NVMFS5113PLT1G

$0.00 (not set)
Vishay Siliconix

SIHA240N60E-GE3

$0.00 (not set)
Top