Shopping cart

Subtotal: $0.00

IPT60R075CFD7XTMA1

Infineon Technologies
IPT60R075CFD7XTMA1 Preview
Infineon Technologies
MOSFET N-CH 600V 33A 8HSOF
$8.74
Available to order
Reference Price (USD)
1+
$8.74000
500+
$8.6526
1000+
$8.5652
1500+
$8.4778
2000+
$8.3904
2500+
$8.303
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPT60R075CFD7XTMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPT60R075CFD7XTMA1

IPT60R075CFD7XTMA1

$8.74

Product details

Infineon Technologies's IPT60R075CFD7XTMA1 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The IPT60R075CFD7XTMA1 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The IPT60R075CFD7XTMA1 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 570µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN

Viewed products

Fairchild Semiconductor

SFS9634

$0.00 (not set)
IXYS

IXFB82N60P

$0.00 (not set)
Fairchild Semiconductor

FQU1N80TU

$0.00 (not set)
Texas Instruments

CSD16404Q5A

$0.00 (not set)
Vishay Siliconix

IRLU110PBF

$0.00 (not set)
Vishay Siliconix

IRFZ40PBF-BE3

$0.00 (not set)
Infineon Technologies

IRF6644TRPBF

$0.00 (not set)
IXYS

IXTK550N055T2

$0.00 (not set)
Diodes Incorporated

2N7002K-7

$0.00 (not set)
Infineon Technologies

IPP80R1K4P7XKSA1

$0.00 (not set)
Top