Shopping cart

Subtotal: $0.00

IRF100P218AKMA1

Infineon Technologies
IRF100P218AKMA1 Preview
Infineon Technologies
MOSFET N-CH 100V 209A TO247AC
$9.82
Available to order
Reference Price (USD)
1+
$9.82000
500+
$9.7218
1000+
$9.6236
1500+
$9.5254
2000+
$9.4272
2500+
$9.329
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IRF100P218AKMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IRF100P218AKMA1

IRF100P218AKMA1

$9.82

Product details

The IRF100P218AKMA1 single MOSFET from Infineon Technologies represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The IRF100P218AKMA1 features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the IRF100P218AKMA1 delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 278µA
  • Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3

Viewed products

Renesas Electronics America Inc

RJK0654DPB-00#J5

$0.00 (not set)
Fairchild Semiconductor

FQB5N50CTM

$0.00 (not set)
Diodes Incorporated

DMT615MLFV-13

$0.00 (not set)
onsemi

FQB44N10TM

$0.00 (not set)
Rohm Semiconductor

RJ1L12CGNTLL

$0.00 (not set)
onsemi

NTP30N06LG

$0.00 (not set)
STMicroelectronics

STB34N65M5

$0.00 (not set)
STMicroelectronics

STB155N3LH6

$0.00 (not set)
PN Junction Semiconductor

P3M173K0K3

$0.00 (not set)
Fairchild Semiconductor

FQA7N80

$0.00 (not set)
Top